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(4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine/[6,6]-phenyl-C61-butyric acid methyl ester-doped ultrathin ZnO layer-based thin film transistor

Based on

1 Articles
2016 Most recent source

Composition

1

doped silicon

Si++
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

zinc oxide ultrathin film

Type Nano Material
Formula
Role semiconductor layer
4

aluminium oxide

aluminum oxide alumina a-AlOx
Type Single Compound
Formula AlO(x)
Role native oxide layer
5

aluminium

aluminum
Type Single Compound
Formula Al
Role source
6

aluminium

aluminum
Type Single Compound
Formula Al
Role drain
7

(4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine/[6,6]-phenyl-C61-butyric acid methyl ester

N-DMBI-doped PC61BM
Type Nano Material
Formula
Role organic dopant layer

Properties

General physical and chemical properties

Property Value Source
change in electron density

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Applications

Area Application Source
electronics

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • Si++/SiO2
  • zinc oxide dihydrate
  1. KWMyoMK0b26X6V12RL
  2. g2QB3hdBOr7h0gwP
Product

(4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine/[6,6]-phenyl-C61-butyric acid methyl ester-doped ultrathin ZnO layer-based thin film transistor

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • Si++/SiO2
  • zinc oxide dihydrate
  1. rilaRfDvugTIY4Kd5t
  2. R6qBPpjSebMw5EhK
Product

(4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine/[6,6]-phenyl-C61-butyric acid methyl ester-doped ultrathin ZnO layer-based thin film transistor

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • Si++/SiO2
  • zinc oxide dihydrate
  1. 9njVMLz6AIBQ5enp0I
  2. he07E0fDGzjrDuZU
Product

(4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine/[6,6]-phenyl-C61-butyric acid methyl ester-doped ultrathin ZnO layer-based thin film transistor

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • Si++/SiO2
  • zinc oxide dihydrate
  1. JwmfhCSvx6pNBP8ehu
  2. vJhk9xYmwXNHx3Cv
Product

(4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine/[6,6]-phenyl-C61-butyric acid methyl ester-doped ultrathin ZnO layer-based thin film transistor

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • Si++/SiO2
  • zinc oxide dihydrate
  1. 5jSxuzovWe5Q49ILep
  2. mXSsNNagKeYRRom3
Product

(4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine/[6,6]-phenyl-C61-butyric acid methyl ester-doped ultrathin ZnO layer-based thin film transistor

References

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