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(4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine/[6,6]-phenyl-C61-butyric acid methyl ester-doped ultrathin ZnO layer-based thin film transistor

Based on

1 Articles
2016 Most recent source

Composition

1

doped silicon

Si++
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

zinc oxide ultrathin film

Type Nano Material
Formula
Role semiconductor layer
4

aluminium oxide

aluminum oxide alumina a-AlOx
Type Single Compound
Formula AlO(x)
Role native oxide layer
5

aluminium

aluminum
Type Single Compound
Formula Al
Role source
6

aluminium

aluminum
Type Single Compound
Formula Al
Role drain
7

(4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine/[6,6]-phenyl-C61-butyric acid methyl ester

N-DMBI-doped PC61BM
Type Nano Material
Formula
Role organic dopant layer

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • Si++/SiO2
  • zinc oxide dihydrate
  1. heip87errxiVeePl2T
  2. yoGFHOB2oksAbLOT
Product

(4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine/[6,6]-phenyl-C61-butyric acid methyl ester-doped ultrathin ZnO layer-based thin film transistor

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • Si++/SiO2
  • zinc oxide dihydrate
  1. rJ83MzV6Wklz0O9xPR
  2. O4GEmlWiDx5cYCun
Product

(4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine/[6,6]-phenyl-C61-butyric acid methyl ester-doped ultrathin ZnO layer-based thin film transistor

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • Si++/SiO2
  • zinc oxide dihydrate
  1. RMZ4UM4JnCnJcshjaN
  2. tOONvVbRhkNSsYVM
Product

(4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine/[6,6]-phenyl-C61-butyric acid methyl ester-doped ultrathin ZnO layer-based thin film transistor

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • Si++/SiO2
  • zinc oxide dihydrate
  1. ZeamEEMehAyCW8sMUE
  2. sJmJeresDi36F7P8
Product

(4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine/[6,6]-phenyl-C61-butyric acid methyl ester-doped ultrathin ZnO layer-based thin film transistor

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • Si++/SiO2
  • zinc oxide dihydrate
  1. 9X0W9iNAUNWGc1IgEM
  2. usplmqfp4Yq8Wzny
Product

(4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine/[6,6]-phenyl-C61-butyric acid methyl ester-doped ultrathin ZnO layer-based thin film transistor

References

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