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polymer thin film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

Si wafer

Type Complex Compound
Formula
Role substrate
2

poly(2,5-bis(3-tetradecyl-thiophene-2-yl)thieno[3,2-b]thiophene) film

pBTTT film
Type Nano Material
Formula
Role semiconductor layer
3

titanium-gold layer

titanium/gold film Ti/Au film Ti/Au
Type Nano Material
Formula
Role source
4

titanium-gold layer

titanium/gold film Ti/Au film Ti/Au
Type Nano Material
Formula
Role drain
5

lead

Type Single Compound
Formula Pb
Role electrodes
6

platinum

Type Single Compound
Formula Pt
Role gate
7

N,N-diethyl-N-methyl-N-(2-methoxyethyl) ammonium bis(trifluoromethanesulfonyl) imide

N,N-diethyl-N-methyl-N-(2- methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)-ammonium bis-(trifluoromethylsulfonyl)imide N, N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulphonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-(trifluoromethylsulfonylimide) N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-trifluoromethylsulfonyl)-imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulfonyl)imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-(trifluoromethylsulfonyl)-imide N,N-Diethyl-2-methoxy-N-methylethanaminium bis[(trifluoromethyl)sulfonyl]azanide N,N-diethyl-2-methoxy-N-methylethanaminium bis[(trifluoromethyl)sulfonyl]azanide N,N-diethyl-N-(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide diethylmethyl(2-methoxyethyl) ammonium bis(trifluoromethylsulfonyl)imide diethylmethyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide [DEME]-[TFSI] [deme][Tf2N] DEME-TFSI
Type Single Compound
Formula C10H20F6N2O5S2
Role gate dielectrics

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
pressure sensor

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si wafer
  • titanium
Product

polymer thin film transistor

Size: not specified

Medium/Support: none

References

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