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near-infrared light photovoltaic detector Based on GaAs nanocone array/monolayer graphene Schottky junction

Based on

1 Articles
2014 Most recent source

Composition

1

GaAs nanocone array

GaAsNC array
Type
Formula
Role
2

silicon nitride

Type
Formula Si3N4
Role
3

monolayer graphene film

monolayer graphene defective graphene MLG layer graphene MLG film MLG
Type
Formula
Role
4

silver

Type Single Compound
Formula Ag
Role Ohmic contacts
5

silver-tin

Ag-Sn
Type Complex Compound
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor for near-infrared light with 850 nm wavelength

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. GcqHlhSKGTuCePNDbYVEjGHTsheFmWJyjJ
Product

near-infrared light photovoltaic detector Based on GaAs nanocone array/monolayer graphene Schottky junction

Size: not specified

Medium/Support: none

References

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