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amorphous indium-gallium-zinc-oxide thin film transistor integrated with plasmonic filter

Based on

1 Articles
2014 Most recent source

Composition

1

LiF/Al/LiF

Type Nano Material
Formula
Role plasmonic filters
2

soda-lime-silica glass

soda-lime glass glass
Type Complex Compound
Formula
Role substrate
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role buffer layer
4

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role gate
5

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
6

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role source
7

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role drain
8

amorphous indium-gallium-zinc-oxide

a-IGZO
Type Complex Compound
Formula
Role active layer
9

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role passivation layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on negative bias illumination stress time

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

References

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