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semiconducting single-walled nanotubes-based field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

horizontally aligned semiconducting single-walled carbon nanotubes array

horizontally aligned s-SWNT array
Type Nano Material
Formula
Role semiconductor layer
3

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
4

titanium

Type Single Compound
Formula Ti
Role gate
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

palladium

Type Single Compound
Formula Pd
Role source
7

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on methane presence

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ethanol
  • methane
  • sapphire
  1. 5zqoFhOM9SlszyqgaUjfU
  2. UmcFPLYzF4EsvXRKNH6hi0pHnXy
  3. rN6H0Q
  4. WAVViH
Product

semiconducting single-walled nanotubes-based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • ethanol
  • sapphire
  1. FLiuqdQrgXBipe5Lu0EPs
  2. eggJEpm7odpjtAuECUoUcAVoABG
  3. OyDSRB
  4. NcmZRn
Product

semiconducting single-walled nanotubes-based field-effect transistor

Size: not specified

Medium/Support: none

References

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