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semiconducting single-walled nanotubes-based field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

horizontally aligned semiconducting single-walled carbon nanotubes array

horizontally aligned s-SWNT array
Type Nano Material
Formula
Role semiconductor layer
3

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
4

titanium

Type Single Compound
Formula Ti
Role gate
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

palladium

Type Single Compound
Formula Pd
Role source
7

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current dependent on methane presence

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Applications

Area Application Source
electronics

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ethanol
  • methane
  • sapphire
  1. GByg6wfIhpHXXWXIUW6lq
  2. mIWlVHXN9cbEUsZCBGeS8cSiDIq
  3. 8tsjJr
  4. nHtX63
Product

semiconducting single-walled nanotubes-based field-effect transistor

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • ethanol
  • sapphire
  1. kGYocg17JVPKeSVaSZ5nG
  2. 4jaOiSbCcRctAYCGIcE8R0CSz3U
  3. 685XuE
  4. s7GSXN
Product

semiconducting single-walled nanotubes-based field-effect transistor

References

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