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semiconducting single-walled nanotubes-based field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

horizontally aligned semiconducting single-walled carbon nanotubes array

horizontally aligned s-SWNT array
Type Nano Material
Formula
Role semiconductor layer
3

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
4

titanium

Type Single Compound
Formula Ti
Role gate
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

palladium

Type Single Compound
Formula Pd
Role source
7

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • ethanol
  • methane
  • sapphire
  1. rPNHK3p7T1h6bQ37tVP1X
  2. UwcXzF3tuxgkI7C6bSSZsE3IznP
  3. 72YadU
  4. Nzlpcu
Product

semiconducting single-walled nanotubes-based field-effect transistor

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • ethanol
  • sapphire
  1. N3dxoEPGeEtjJoWtMfO20
  2. iz2aRm7iqStW0cbNpJF1bb2SdYx
  3. IJuAXD
  4. KrJxEt
Product

semiconducting single-walled nanotubes-based field-effect transistor

References

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