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electric-double-layer transistor

Based on

1 Articles
2014 Most recent source

Composition

1

Si/SiO2

Type Complex Compound
Formula
Role substrate
2

edge-rich 2H-MoS2 ultrathin nanosheets

chemically exfoliated MoS2 nanosheets molybdenum(IV) sulfide nanosheets 2D crystals of molybdenum sulfide molybdenum(II) sulfide nanosheets molybdenum disulfide nanosheets molybdenum disulfide monolayers molybdenum sulfide nanosheets multilayer molybdenum sulfide molybdenum disulfide flakes MoS2 nanometer-sized sheets ultrathin MoS2 nanosheets multilayered MoS2 flakes layered MoS2 2D material multilayer MoS2 flakes few-layer MoS2 flakes atomically thin MoS2 MoS2 nanostructures 2D MoS2 nanolayers multilayered MoS2 MoS2 nanosheets multilayer MoS2 MoS2 nanoflakes exfoliated MoS2 sheet-like MoS2 monolayer MoS2 MoS2 flakes MoS2 sheets MoS2 slabs MoS2 NS MoS2 NS ce-MoS2
Type
Formula
Role
3

titanium

Type
Formula Ti
Role
4

gold

Type
Formula Au
Role
5

N,N-diethyl-N-methyl-N-(2-methoxyethyl) ammonium bis(trifluoromethanesulfonyl) imide

N,N-diethyl-N-methyl-N-(2- methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)-ammonium bis-(trifluoromethylsulfonyl)imide N, N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulphonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-(trifluoromethylsulfonylimide) N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-trifluoromethylsulfonyl)-imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulfonyl)imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-(trifluoromethylsulfonyl)-imide N,N-Diethyl-2-methoxy-N-methylethanaminium bis[(trifluoromethyl)sulfonyl]azanide N,N-diethyl-2-methoxy-N-methylethanaminium bis[(trifluoromethyl)sulfonyl]azanide N,N-diethyl-N-(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide diethylmethyl(2-methoxyethyl) ammonium bis(trifluoromethylsulfonyl)imide diethylmethyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide [DEME]-[TFSI] [deme][Tf2N] DEME-TFSI
Type
Formula C10H20F6N2O5S2
Role

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  • Si/SiO2
Product

electric-double-layer transistor

References

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