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complementary metal-oxide-semiconductor inverter

Based on

1 Articles
2016 Most recent source

Composition

1

p-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

p-n silicon nanowires

p-n silicon NW p-n Si NW p-n SiNW
Type Nano Material
Formula
Role channels
4

Ni/Cr

Type Complex Compound
Formula
Role electrodes
5

gold

Type Single Compound
Formula Au
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier concentration dependent on doping concentration

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. pBnqKj6lBrh
Product

complementary metal-oxide-semiconductor inverter

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. qQBwq1HQyvQ
Product

complementary metal-oxide-semiconductor inverter

Size: not specified

Medium/Support: none

References

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