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InGaAs FinFET

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

nickel monosilicide

nickel silicide
Type
Formula NiSix
Role
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
5

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia HfO2
Type
Formula HfO2
Role
6

In0.53Ga0.47As film

Type Nano Material
Formula
Role channels
7

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia a-HfO2 HfO2
Type Single Compound
Formula HfO2
Role gate dielectrics
8

titanium

Type Single Compound
Formula Ti
Role adhesion layer
9

nickel

Type Single Compound
Formula Ni
Role source
10

nickel

Type Single Compound
Formula Ni
Role drain
11

nickel

Type Single Compound
Formula Ni
Role gate

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  • gallium
  1. vg50Iapf2LFyGStsf6
Product

InGaAs FinFET

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  • gallium
  1. RO7EPc6cUN1AIzE7lZ
Product

InGaAs FinFET

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  • gallium
  1. uMDYENqRwCxcQ0evVj
Product

InGaAs FinFET

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  • gallium
  1. rJcp5pRD7xmzuf53lE
Product

InGaAs FinFET

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  • gallium
  1. VvltY5MAFXLWJKHPzZ
Product

InGaAs FinFET

References

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