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InGaAs FinFET

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type
Formula Si
Role
2

nickel monosilicide

nickel silicide
Type
Formula NiSix
Role
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
5

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia HfO2
Type
Formula HfO2
Role
6

In0.53Ga0.47As film

Type Nano Material
Formula
Role channels
7

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia a-HfO2 HfO2
Type Single Compound
Formula HfO2
Role gate dielectrics
8

titanium

Type Single Compound
Formula Ti
Role adhesion layer
9

nickel

Type Single Compound
Formula Ni
Role source
10

nickel

Type Single Compound
Formula Ni
Role drain
11

nickel

Type Single Compound
Formula Ni
Role gate

Properties

General physical and chemical properties

Property Value Source
drain current dependent on drain voltage

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Applications

Area Application Source
electronics

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Characterization

Method Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  • gallium
  1. SqVoSH7Hyy2QaJvPEz
Product

InGaAs FinFET

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  • gallium
  1. MROBIj04XRmylvkJr2
Product

InGaAs FinFET

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  • gallium
  1. hojQNCcrbAokpp5kGG
Product

InGaAs FinFET

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  • gallium
  1. WnXtyP5TXIvuw84ctS
Product

InGaAs FinFET

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • indium
  • gallium
  1. VdjRqLvzfckCY60LmL
Product

InGaAs FinFET

References

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