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s-indaceno[1,2-b:5,6-b']dithiophene-4,9-dione film-based organic field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

n-octadecyltrimethoxylsilane

n-octadecyltrimethoxysilane trimethoxy(octadecyl)silane noctadecyltrimethoxysilane octadecyltrimethoxy silane octadecyltrimethoxylsilane octadecyltrimethoxysilane trimethoxyoctadecylsilane C18TMOS C18TMS C18TMS n-ODMS ODTMS OTMOS ODMS ODTS OTMS TMOS ODS OTS TMS
Type
Formula CH3(CH2)17Si(OCH3)3
Role
4

C20H14O2S2

Type
Formula C20H14O2S2
Role
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • octadecyltrimethoxysilane, silica-coated silicon
  • C20H14O2S2
Product

s-indaceno[1,2-b:5,6-b']dithiophene-4,9-dione film-based organic field-effect transistor

Size: not specified

Medium/Support: none

References

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