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oxide semiconductor thin-film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

B-doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

hafnium lanthanum oxide

Type Single Compound
Formula HfLaO(x)
Role gate dielectrics
4

ZnSnO

Type
Formula
Role
5

aluminium

aluminum
Type Single Compound
Formula Al
Role source
6

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

oxide semiconductor thin-film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
Product

oxide semiconductor thin-film transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • Si/SiO2 substrate
  • hafnium lanthanum oxide
Product

oxide semiconductor thin-film transistor

Size: not specified

Medium/Support: none

References

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