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amorphous indium-gallium-zinc-oxide thin film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

soda-lime-silica glass

soda-lime glass glass
Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role buffer layer
3

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role gate
4

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
5

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role source
6

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role drain
7

amorphous indium-gallium-zinc-oxide

a-IGZO
Type Complex Compound
Formula
Role active layer
8

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role passivation layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on gate voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

References

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