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ITO/HATCN/NPD/TAPC/emitter:26mCPy/DPPS/BmPyPB/LiF/Al device

Based on

1 Articles
2014 Most recent source

Composition

1

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role anode
2

dipyrazino(2,3-f:2',3'-h)-quinoxaline-2,3,6,7,10,11-hexacarbonitrile

dipyrazino(2,3-f:2',3'-h)-quinoxaline-2,3,6,7,10,11-hexacarbonitrile dipyrazino[2,3-f:2',3'-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile dipyrazino[2,3-f:2'3'-h] quinoxaline-2,3,6,7,10,11-hexacarbonitrile dipyrazino[2,3-f:2'3'-h]quinoxaline-2,3,6,7,10,11-hex acarbonitrile 1,4,5,8,9,12-hexaaza-triphenylene-2,3,6,7,10,11-hexacarbonitrile 1,4,5,8,9,11-hexaazatriphenylene-2,3,6,7,10,11-hexacarbonitrile 1,4,5,8,9,12-hexaazatriphenylene-2,3,6,7,10,11-hexacarbonitrile 1,4,5,8,9,12-hexaazatriphenylene-hexacarbonitrile 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile 1,4,5,8,9,11-hexaazatriphenylenehexacabonitrile hexaazatriphenylene hexacarbonitrile HAT(CN)6 HAT-CN HATCN HI-1 HAT
Type Single Compound
Formula C18N12
Role hole transport layer
3

N,N'-di-[(1-naphthyl)-N,N'-diphenyl]-1,1'-biphenyl-4,4'-diamine

N,N'-bis-(1-naphthyl)-N,N'-biphenyl-1,1'-biphenyl-4,4'-diamine N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine N,N'-di(naphthalen-1-yl)-N,N'-diphenylbiphenyl-4,4'-diamine N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine 4,4'-bis[N-(1-naphthyl)-N-phenyl]biphenyldiamine N,N'-di(naphthalen-1-yl)-N,N'-diphenylbenzidine 4,4'-bis[N-(1-naphthyl)-N-phenylamino]biphenyl N,N'-di(1-naphthyl)-N,N'-diphenylbenzidine NPB NPD
Type Single Compound
Formula C44H32N2
Role hole transport layer
4

4-{1-[4-(diphenylamino)phenyl]cyclohexyl}-N,N-diphenylaniline

1,1-bis[4-[N,N-di(p-tolyl)amino]phenyl]cyclohexane di-[4-(N,N-di-p-tolyl-amino)-phenyl]cyclohexane di-[4-(N,N-di-toylyl-amino)-phyenyl]cyclohexane di-[4-(N,N-ditolyl-amino)-phenyl]cyclohexane TAPC
Type Single Compound
Formula C42H38N2
Role hole transport layer
5

Pt2O2:26mCPy mixture

Type Complex Compound
Formula
Role emission layer
6

diphenyl-bis[4-(pyridin-3-yl)phenyl]silane

DPPS
Type Single Compound
Formula C34H26N2Si
Role electron transport layer
7

3,3';';,5,5';';-tetra(3-pyridyl)-1,1';;3';,1';';-terphenyl

3,3'',5,5''-tetra(pyridine-3-yl)-1,1':3',1''-terphenyl 3,3'',5,5''-tetra(pyridin-3-yl)-1,1':3',1''-terphenyl 3,5,3'',5''-tetra-3-pyridyl-1,1';3',1''-terphenyl 1,3-bis[3, 5-di(pyridin-3-yl)phenyl]benzene 1,3-bis(3,5-di(pyridin-3-yl)phenyl)benzene 1,3-bis[3,5-di(pyridin-3-yl)phenyl]benzene 1,3-bis(3,5-dipyrid-3-ylphenyl)benzene BmPyPhB B3PyPB BMPYPB BmByPB BmPyPB BmPyPb
Type Single Compound
Formula C38H26N4
Role electron transport layer
8

lithium fluoride

Type Single Compound
Formula LiF
Role electron transport layer
9

aluminium

aluminum
Type Single Compound
Formula Al
Role cathode

Properties

General physical and chemical properties

Property Value Source
CIE color parameters

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • dipyrazino(2,3-f:2',3'-h)-quinoxaline-2,3,6,7,10,11-hexacarbonitrile
  • tin-doped indium oxide
Product

ITO/HATCN/NPD/TAPC/emitter:26mCPy/DPPS/BmPyPB/LiF/Al device

Method 2

Type: Physical formation
Source:
Starting materials
  • dipyrazino(2,3-f:2',3'-h)-quinoxaline-2,3,6,7,10,11-hexacarbonitrile
  • tin-doped indium oxide
Product

ITO/HATCN/NPD/TAPC/emitter:26mCPy/DPPS/BmPyPB/LiF/Al device

Method 3

Type: Physical formation
Source:
Starting materials
  • dipyrazino(2,3-f:2',3'-h)-quinoxaline-2,3,6,7,10,11-hexacarbonitrile
  • tin-doped indium oxide
Product

ITO/HATCN/NPD/TAPC/emitter:26mCPy/DPPS/BmPyPB/LiF/Al device

Method 4

Type: Physical formation
Source:
Starting materials
  • dipyrazino(2,3-f:2',3'-h)-quinoxaline-2,3,6,7,10,11-hexacarbonitrile
  • tin-doped indium oxide
Product

ITO/HATCN/NPD/TAPC/emitter:26mCPy/DPPS/BmPyPB/LiF/Al device

Method 5

Type: Physical formation
Source:
Starting materials
  • dipyrazino(2,3-f:2',3'-h)-quinoxaline-2,3,6,7,10,11-hexacarbonitrile
  • tin-doped indium oxide
Product

ITO/HATCN/NPD/TAPC/emitter:26mCPy/DPPS/BmPyPB/LiF/Al device

References

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