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field-effect transistor based on aligned P3BT/PS blend film

Based on

1 Articles
2014 Most recent source

Composition

1

n-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

aligned poly(3-butylthiophene) nanowires within polystyrene matrix

aligned P3BT nanowires within PS matrix aligned P3BT/PS blend
Type Nano Material
Formula
Role semiconductor layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
anisotropic charge carrier mobility

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
  1. EFgk4oydmPYlIU4SCDmFu7PsW6NckVAalWAMC4G
Product

field-effect transistor based on aligned P3BT/PS blend film

Method 2

Type: Physical formation
Source:
  1. 7HASOLsgXzvGhok45WtVMs4KSQTm2hAuB3VBAVe
Product

field-effect transistor based on aligned P3BT/PS blend film

Method 3

Type: Physical formation
Source:
  1. 3IcK2mDPWx4eeV1CwU686CzWQk8waxCn843Kz1j
Product

field-effect transistor based on aligned P3BT/PS blend film

Method 4

Type: Physical formation
Source:
  1. oBDGaqZRFpdn7xPrnPSxuv8OgUXcOIfoN9Ho7ND
Product

field-effect transistor based on aligned P3BT/PS blend film

Method 5

Type: Physical formation
Source:
  1. ePiZfrSxicu2t9okEFeh62zpR3RwljsCRK8MQY1
Product

field-effect transistor based on aligned P3BT/PS blend film

References

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