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field-effect transistor based on aligned P3BT/PS blend film

Based on

1 Articles
2014 Most recent source

Composition

1

n-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

aligned poly(3-butylthiophene) nanowires within polystyrene matrix

aligned P3BT nanowires within PS matrix aligned P3BT/PS blend
Type Nano Material
Formula
Role semiconductor layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
  1. 0ljiF9wyLlWz5DmUCCpN1hywTGpVuilGLtuYFbL
Product

field-effect transistor based on aligned P3BT/PS blend film

Method 2

Type: Physical formation
Source:
  1. 9HZjtrZBmiBvtyRtfkOL4IJ7SrraRECEQ2S306y
Product

field-effect transistor based on aligned P3BT/PS blend film

Method 3

Type: Physical formation
Source:
  1. JQMct5EKhyybHKC6BsB7CM0xyGIavYcDrZxWJd1
Product

field-effect transistor based on aligned P3BT/PS blend film

Method 4

Type: Physical formation
Source:
  1. 6ziiPRnyW4r6R14znHiclAMKuYCvBf6N6LEfJTu
Product

field-effect transistor based on aligned P3BT/PS blend film

Method 5

Type: Physical formation
Source:
  1. gbcDRIsoJ3p471Hs3FgSFsC0bViNchmBscLBPSh
Product

field-effect transistor based on aligned P3BT/PS blend film

References

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