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h-BN/WSe2 heterostructure-based back-gated field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

WSe2 nanosheets

Type Nano Material
Formula
Role semiconductor layer
4

Pd/Au film

Type Nano Material
Formula
Role source
5

Pd/Au film

Type Nano Material
Formula
Role drain
6

hexagonal boron nitride nanosheets

h-BN NS
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
Product

h-BN/WSe2 heterostructure-based back-gated field-effect transistor

References

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