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graphene-based field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

graphene nanosheets

graphene sheets graphene
Type
Formula
Role
4

chromium-gold films

chromium-gold films chromium/gold film chromium/gold Cr-Au films Cr/Au film Cr/Au
Type Nano Material
Formula
Role drain
5

chromium-gold films

chromium-gold films chromium/gold film chromium/gold Cr-Au films Cr/Au film Cr/Au
Type Nano Material
Formula
Role source
6

triphenylsulfonium perfluoro-1-butanesufonate

TPS-Nf
Type
Formula C22H15F9O3S2
Role
7

p-doped graphene

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on preparation conditions (UV irradiation time)

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

graphene-based field-effect transistor

Size: not specified

Medium/Support: none

References

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