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ion-gel-gated graphene-WSe2 vertical field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

degenerately doped Si

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
3

single-layer rectangular graphene film

nanopatterned graphene structures rectangular graphene graphene
Type Nano Material
Formula
Role source
4

WSe2 flake

Type Nano Material
Formula
Role semiconductor layer
5

palladium

Type Single Compound
Formula Pd
Role adhesion layer
6

ion-gel

Type Complex Compound
Formula
Role gate dielectrics
7

gold

Type Single Compound
Formula Au
Role drain
8

gold

Type Single Compound
Formula Au
Role gate

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • methane
  1. DRsbYI8
  2. rtLAOZt50ICzJ00WuW47PEPr1rCD
  3. b21DsDxrt6NuEuk1mGBfR5Q1g
Product

ion-gel-gated graphene-WSe2 vertical field-effect transistor

References

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