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transistor memory device

Based on

1 Articles
2016 Most recent source

Composition

1

p-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

SWNT film

Type Nano Material
Formula
Role channels
4

PMMA/water

Type Complex Compound
Formula
Role passivation layer
5

gold

Type Single Compound
Formula Au
Role electrodes

Properties

General physical and chemical properties

Property Value Source
drain current dependent on ambient/vacuum

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. 1pxyw6wm2O4HdfO2hZlOJ36LxRKIpp
  2. dXTaOSWc3aFscbS
Product

transistor memory device

Method 2

Type: Physical formation
Source:
Starting materials
  1. CjXOvXeqBRYNPXjbaPk5KoQDCxGak4
  2. ojLztCOrDtZ6vRu
Product

transistor memory device

Method 3

Type: Physical formation
Source:
Starting materials
  1. 4PXzXHbOu7zXwQokGBL42lINweqXbC
  2. l5SHhqDNL64mEuF
Product

transistor memory device

Method 4

Type: Physical formation
Source:
Starting materials
  1. aYtfmztNpVu5ajQj5Ku75nQ3eCR9LJ
  2. fCE98GGdtxH5k8I
Product

transistor memory device

Method 5

Type: Physical formation
Source:
Starting materials
  1. Q34aWOmWNTRSdtu8BOr2o76rFQrRzM
  2. ST75yJjCWxFB318
Product

transistor memory device

References

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