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TiO2 nanotubes-InGaN/GaN multiple quantum well vertical light-emitting diode

Based on

1 Articles
2016 Most recent source

Composition

1

gallium nitride

Type Single Compound
Formula GaN
Role light injection layer
2

titanium-gold layer

Ti/Au layer
Type Complex Compound
Formula
Role n-pad electrode
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role protective layer
4

chromium-gold

Cr/Au
Type Complex Compound
Formula
Role n-type electrode
5

silicon-doped n-gallium nitride

Si-doped n-GaN
Type
Formula
Role
6

p-doped gallium(III) nitride

p-GaN
Type
Formula
Role
7

indium gallium nitride/gallium nitride multiple quantum wells

InGaN/GaN MQW
Type
Formula
Role
8

n-doped gallium(III) nitride

n-GaN
Type
Formula
Role
9

silver

Type Single Compound
Formula Ag
Role p-pad electrode
10

titanium oxide nanotubes

TiO2 NT
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Source
electric current

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Applications

Area Application Source
lighting devices

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium nitride
  1. Y2Cr6pnmm9d6fMqBZ5dEi
  2. AtGQoulTIJVwNyLJ
  3. cjhYMM
Product

TiO2 nanotubes-InGaN/GaN multiple quantum well vertical light-emitting diode

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • gallium nitride
  1. AIYyrxqBj61BNboZO8k3U
  2. jcnBBDNgtKVkgvKY
  3. Qybuc7
Product

TiO2 nanotubes-InGaN/GaN multiple quantum well vertical light-emitting diode

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • gallium nitride
  1. ljjvHzneIgHjcqNe0UNB0
  2. dIEGO4iSjy3IApjf
  3. GV5iLX
Product

TiO2 nanotubes-InGaN/GaN multiple quantum well vertical light-emitting diode

References

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