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InGaN/GaN multiple quantum well vertical light-emitting diode

Based on

1 Articles
2016 Most recent source

Composition

1

gallium nitride

Type Single Compound
Formula GaN
Role light injection layer
2

titanium-gold layer

Ti/Au layer
Type Complex Compound
Formula
Role n-pad electrode
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role protective layer
4

chromium-gold

Cr/Au
Type Complex Compound
Formula
Role n-type electrode
5

silicon-doped n-gallium nitride

Si-doped n-GaN
Type
Formula
Role
6

p-doped gallium(III) nitride

p-GaN
Type
Formula
Role
7

indium gallium nitride/gallium nitride multiple quantum wells

InGaN/GaN MQW
Type
Formula
Role
8

n-doped gallium(III) nitride

n-GaN
Type
Formula
Role
9

silver

Type Single Compound
Formula Ag
Role p-pad electrode

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium nitride
  1. GY6cXwOuVTMM4O7xOe1Ht
  2. WbAuZ9W6i60HMuSU
  3. zDepch
Product

InGaN/GaN multiple quantum well vertical light-emitting diode

References

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