Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

InGaN/GaN multiple quantum well vertical light-emitting diode

Based on

1 Articles
2016 Most recent source

Composition

1

gallium nitride

Type Single Compound
Formula GaN
Role light injection layer
2

titanium-gold layer

Ti/Au layer
Type Complex Compound
Formula
Role n-pad electrode
3

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role protective layer
4

chromium-gold

Cr/Au
Type Complex Compound
Formula
Role n-type electrode
5

silicon-doped n-gallium nitride

Si-doped n-GaN
Type
Formula
Role
6

p-doped gallium(III) nitride

p-GaN
Type
Formula
Role
7

indium gallium nitride/gallium nitride multiple quantum wells

InGaN/GaN MQW
Type
Formula
Role
8

n-doped gallium(III) nitride

n-GaN
Type
Formula
Role
9

silver

Type Single Compound
Formula Ag
Role p-pad electrode

Properties

General physical and chemical properties

Property Value Source
electric current

1 more entry available to subscribers only.

Or, view sample content

Applications

Area Application Source
lighting devices

0 more entry available to subscribers only.

Or, view sample content

Characterization

Method Source
electroluminescence

1 more entry available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium nitride
  1. H039QYeT53iQwD8yf3PUV
  2. 9yTQXmQFswrO10Hh
  3. 8Siqk5
Product

InGaN/GaN multiple quantum well vertical light-emitting diode

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial