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n-doped fullerene-based bottom-gate top-contact thin film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

Si++

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

divinyltetramethyldisiloxane bis(benzocyclobutene) monomer

divinyltetramethyldisiloxane bis(benzocyclobutene) divinyltetramethyldisiloxane-bis(benzocyclobutene) divinyl-tetramethylsiloxane-bis(benzocyclobutene) divinylsiloxane-bis-benzocyclobutene divinylsiloxane-bisbenzocyclobutene BCB 3022-46 BCB monomer BCB
Type Single Compound
Formula C24H30OSi2
Role surface protecting layer
4

n-doped [6,6]-phenyl-C61-butyric acid methyl ester film

n-doped PCBM film
Type Nano Material
Formula
Role channels
5

aluminium

aluminum
Type Single Compound
Formula Al
Role source
6

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Source
channel current on-off ratio

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • divinyltetramethyldisiloxane bis(benzocyclobutene) monomer
  • Si++/SiO2
  1. XwmkH6vXFmLdwLfKEDLPJAOSfrm
Product

n-doped fullerene-based bottom-gate top-contact thin film transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • divinyltetramethyldisiloxane bis(benzocyclobutene) monomer
  • Si++/SiO2
  1. dNIYkp1PTFJy4GV5opKwWCXpxHQ
Product

n-doped fullerene-based bottom-gate top-contact thin film transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • divinyltetramethyldisiloxane bis(benzocyclobutene) monomer
  • Si++/SiO2
  1. YJXpmjmEaUuwxoIxwcD76pOjUtI
Product

n-doped fullerene-based bottom-gate top-contact thin film transistor

Method 4

Type: Physical formation
Source:
Starting materials
  • divinyltetramethyldisiloxane bis(benzocyclobutene) monomer
  • Si++/SiO2
  1. NqHH1SjpwYrneRyGqq68GwRGHCb
Product

n-doped fullerene-based bottom-gate top-contact thin film transistor

Method 5

Type: Physical formation
Source:
Starting materials
  • divinyltetramethyldisiloxane bis(benzocyclobutene) monomer
  • Si++/SiO2
  1. DEYOOWg7awpsBn7LthmXnuEA85r
Product

n-doped fullerene-based bottom-gate top-contact thin film transistor

References

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