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graphene/hexagonal boron nitride-based organic field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role back gate
2

p-doped silicon

p-doped Si silicon p-Si
Type Single Compound
Formula Si
Role gate dielectrics
3

5,6,11,12-tetraphenylnaphthacene

rubrene
Type
Formula C42H28
Role
4

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role source
5

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role drain
6

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
7

exfoliated graphite nanosheets

few-layer graphene nanosheets graphene nanoplatelets graphite nanoplatelets multilayered graphene few-layered graphene multilayer graphene graphene nanosheets graphite nanoplates graphite nanosheets few layer graphene few-layer graphene carbon nanosheets graphitic layers graphene sheets graphite sheets graphene film exfoliated GR few-layer GNS nanographite ML-graphene Gr sheets graphene CNS GNP FLG GNS GN Gr
Type Nano Material
Formula
Role upper gate

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

graphene/hexagonal boron nitride-based organic field-effect transistor

References

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