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graphene/hexagonal boron nitride-based organic field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role back gate
2

p-doped silicon

p-doped Si silicon p-Si
Type Single Compound
Formula Si
Role gate dielectrics
3

5,6,11,12-tetraphenylnaphthacene

rubrene
Type
Formula C42H28
Role
4

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role source
5

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role drain
6

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
7

electrochemically exfoliated graphene

exfoliated graphite nanosheets few-layer graphene nanosheets graphene nanoplatelets graphite nanoplatelets multilayered graphene few-layered graphene graphene nanosheets graphite nanosheets multilayer graphene graphite nanoplates few-layer graphene few layer graphene carbon nanosheets graphitic layers graphene sheets graphite sheets graphene film exfoliated GR few-layer GNS nanographite ML-graphene Gr sheets graphene GNP CNS FLG GNS GN Gr
Type Nano Material
Formula
Role upper gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

graphene/hexagonal boron nitride-based organic field-effect transistor

Size: not specified

Medium/Support: none

References

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