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N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

highly doped silicon

highly doped Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer

PDI8-CN2 monolayer
Type Nano Material
Formula
Role semiconductor layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)
  1. D5lJibDQFHiPhbz1n2rkGXfzCN4gKHvCCIubOPmyWQ5KcsF8X
  2. YeJbjqJVEIJHMmCzuJK4yaK4tY5LSRFctCGxeMjiYB7zlq31wE
  3. Nq1V4L0XILPRs64E8M1fgwQVhQcE
Product

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)
  1. fTM4lpfInM2qajvrPc8w1N46nRw72GR7A83MZXAVwyCvNQRkn
  2. ttDOg3aQsvqhwoukGpkuj8EB1GbL6RGEYN46hYgkYt5YeEL3ku
  3. dXMsmbI2Ppc599WRL0ykUTytwI91i
Product

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)
  1. sa9Affzbw4hA7yrHuemPTBckauWibMJRy6prwDFnjkiw7Avs
  2. ZwUPspOY5Fysy6MR9wJP3cWZ63jYAJHni72JM0WptEusRITDek
  3. xJEnBzkE9ZflzZIYSUWN5s0CctVOf
Product

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)
  1. Gj5LVeiWPTpbFyN1XJmCR3JjqewEYMVkaXvQwRPNPrbxZWpzZ
  2. qICTqj2VZjb0QH9NOntDcqFsihXGzFx7auO6cOPebfgPetIjtU
  3. rw2sGbMKeDEjfbxLqt8AHq8letUlR
Product

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

Method 5

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)
  1. poaQIe9iitV9S486EhUsX74CvsU5Hi6RflgkMHxVsJGuiKoSP
  2. ms6wTugtjvN7jLilU82bO6BOKAkqWgJ7GcMfDiQGfJzvca92FU
  3. d8aoilTsMGh8O67zbi4n583Oij5dI
Product

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

References

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