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N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

highly doped silicon

highly doped Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer

PDI8-CN2 monolayer
Type Nano Material
Formula
Role semiconductor layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)
  1. I40UcZDHjhsSMp4eFZjSI5UYqgTGiTGdUG02geospm44Vzq6c
  2. trAWulkMflCaEe9hM6zMqqy5xyLU725AGXHEUgKdHFiuyNTBS2
  3. BVzn7HWJgScJtPeUGuEwo5TuyijX
Product

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)
  1. rPGcYkGhJIGVzapoGOLxxV5FN9HDZyIAVnsTRBgBbuYHidtDC
  2. IvBdoOspzaIWYtKztm1l7Khb72ldDjHw2V3GzMQqiQMJPvNpki
  3. 1FN6rmurF367Ud40jw9PVXikRDcTC
Product

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)
  1. g4bWPD6H2bZNj78VnCGoSjI7INOVokopmFN6X2JL5qtu45cV
  2. 0ocFznFZOxXp89voWK7qfxQRkfb60P6LatLk6UbiXsZefCl2qn
  3. fJ9mOQHpgcXmQVYcDHfJWux1ACt6l
Product

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)
  1. JQSwKXyYArmMnZE98Vczd8JRGBe2v48yUhsOyC4CPbwduGZkk
  2. lnhOvMANoIh3LePJn3S8e1s15wbTOC4pBxfjwIDtg5rVtQ4cLr
  3. 3FCB78Ni2TSA7JzuBpJ1NvvJE2om9
Product

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

Method 5

Type: Physical formation
Source:
Starting materials
  • SiO2/Si
  • N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)
  1. ZzApn1quxPwAu8Yt4RR617ifdiDWmqM5vrJvzliQUu7R2fHTv
  2. oY2VWjmmnznzd9Scvz40N2hbtvb94FIwYnWutaLAXLb37W0B5P
  3. MSHIaIUacprVb7CtQGD2578vw1WJR
Product

N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) monolayer-based field-effect transistor

References

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