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two-dimensional transition metal dichalcogenide-based back-gated field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

bilayer molybdenum(IV) sulfide monolayer

bilayered molybdenum sulfide nanosheets nanoflakes of molybdenum disulfide molybdenum(IV) sulfide nanosheets multilayered molybdenum disulfide molybdenum disulfide nanosheets few-layer molybdenum disulfide molybdenum(IV) sulfide bilayer molybdenum sulfide nanosheets bilayer molybdenum disulfide molybdenum sulfide nanosheet molybdenum sulfide bilayer few-layered MoS2 crystals few-layer MoS2 nanosheets two-layer MoS2 nanosheets layered MoS2 2D material few-layer MoS2 crystals bilayer MoS2 nanosheets few-layer MoS2 flakes bilayered MoS2 flakes bilayer MoS2 crystals two-dimensional MoS2 bilayer MoS2 sheets few-layers of MoS2 2L MoS2 nanosheets 2L MoS2 nanoflakes multilayered MoS2 bilayer MoS2 film 2D MoS2 thin film 2-monolayer MoS2 MoS2 nanosheets MoS2 nanoflakes MoS2 nanoflakes 2-L-MoS2 flakes few-layer MoS2 MoS2 crystals bi-layer MoS2 bilayer MoS2 MoS2 bilayer layered MoS2 bilayer MoS2 MoS2 sheets MoS2 flakes MoS2 flake 2D MoS2 2L-MoS2 2L MoS2
Type Nano Material
Formula
Role semiconductor layer
4

Al/Cr/Au film

Type Nano Material
Formula
Role source
5

Al/Cr/Au film

Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si/SiO2
  • molybdenum(IV) sulfide
Product

two-dimensional transition metal dichalcogenide-based back-gated field-effect transistor

Size: not specified

Medium/Support: none

References

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