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transistor memory device

Based on

1 Articles
2016 Most recent source

Composition

1

p-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

SWNT film

Type Nano Material
Formula
Role channels
4

PVDF-TrFE

Type Polymer
Formula
Role passivation layer
5

gold

Type Single Compound
Formula Au
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on programming/erasing voltage pulse

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
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  2. uworQoCrkhYi3FS
Product

transistor memory device

Size: not specified

Medium/Support: none

References

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