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permeable aluminum base transistor

Based on

1 Articles
2014 Most recent source

Composition

1

soda-lime-silica glass

soda-lime glass glass
Type Complex Compound
Formula
Role substrate
2

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role collector
3

2,9-dimethyl-anthra[2,1-def:6,5,10-d'e'f']diisoquinoline- 1,3,8,10-tetrone

N,N'-dimethyl-3,4,9,10-perylene tetracarboxylic diimide N,N'-dimethyl perylene tetracarboxylic acid diimide MePTCDI
Type
Formula C26H14N2O4
Role
4

porous aluminum film

porous Al film
Type Nano Material
Formula
Role base
5

example of optionally substituted fullerene

polycrystalline fullerite C60 fullerene nanoparticles C60 fullerene particles (C60-Ih)[5,6]fullerene (C60-Ih)[5,6]fullerene buckminsterfullerene example of fullerene fullerene-C60 anion fullerene molecule C60 nanoparticles fullerene layer C60 fullerenes C60 fullerenes C60 fullerene fullerene C60 fullerene-C60 [60]fullerene C60 fullerene C60-fullerene Ceo fullerene fullerene C60 fullerene-C60 fullerene[60] C60 molecule C60 molecule fullerenes C60 peapod fullerene buckyball C60 anion C60- C60 C60
Type
Formula
Role
6

aluminium

aluminum
Type Single Compound
Formula Al
Role emitter

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
collector current density

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • 2,9-dimethyl-anthra[2,1-def:6,5,10-d'e'f']diisoquinoline- 1,3,8,10-tetrone
  • indium tin oxide glass
Product

permeable aluminum base transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • 2,9-dimethyl-anthra[2,1-def:6,5,10-d'e'f']diisoquinoline- 1,3,8,10-tetrone
  • indium tin oxide glass
Product

permeable aluminum base transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • 2,9-dimethyl-anthra[2,1-def:6,5,10-d'e'f']diisoquinoline- 1,3,8,10-tetrone
  • indium tin oxide glass
Product

permeable aluminum base transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • 2,9-dimethyl-anthra[2,1-def:6,5,10-d'e'f']diisoquinoline- 1,3,8,10-tetrone
  • indium tin oxide glass
Product

permeable aluminum base transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • 2,9-dimethyl-anthra[2,1-def:6,5,10-d'e'f']diisoquinoline- 1,3,8,10-tetrone
  • indium tin oxide glass
Product

permeable aluminum base transistor

Size: not specified

Medium/Support: none

References

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