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ferroelectric side-gated single InP nanowire field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

P+-Si/SiO2

Type Complex Compound
Formula
Role substrate
2

InP nanowires

InP NW
Type Nano Material
Formula
Role channels
3

poly(vinylidene fluoride-trifluoroethylene)

P(VDF-TrFE)
Type Polymer
Formula
Role ferroelectric layer
4

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role source
5

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role drain
6

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on gate voltage

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. 777UOp
  2. kSLpPC2WYGZcOlXgOP2TDgGNjH
Product

ferroelectric side-gated single InP nanowire field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. d1TkDQ
  2. o0CoZE4CYHfoFiLAizy5D9LEUK
Product

ferroelectric side-gated single InP nanowire field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  1. WIP7De
  2. Pno5t6D9d0K26htSlY5XpweByN
Product

ferroelectric side-gated single InP nanowire field-effect transistor

Size: not specified

Medium/Support: none

References

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