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ferroelectric side-gated single InP nanowire field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

P+-Si/SiO2

Type Complex Compound
Formula
Role substrate
2

InP nanowires

InP NW
Type Nano Material
Formula
Role channels
3

poly(vinylidene fluoride-trifluoroethylene)

P(VDF-TrFE)
Type Polymer
Formula
Role ferroelectric layer
4

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role source
5

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role drain
6

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role gate

Properties

General physical and chemical properties

Property Value Source
drain current dependent on gate voltage

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Sensor properties

Type of sensor Sensor property Source
light sensor for single-wavelength light

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Applications

Area Application Source
optoelectronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. P7hXsH
  2. yzAmf2fbGovgmOnlyQ2L2Xygpr
Product

ferroelectric side-gated single InP nanowire field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  1. J1LcLH
  2. 5Rw1OCYlF8etVHX7YQ1BsntN64
Product

ferroelectric side-gated single InP nanowire field-effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  1. B5otjm
  2. p4QTJ6OQcbJgfLsQKwF95lcRZE
Product

ferroelectric side-gated single InP nanowire field-effect transistor

References

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