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field-effect transistor based on thin hexagonal boron nitride layer-capped indium selenide atomic sheet

Based on

1 Articles
2016 Most recent source

Composition

1

p-doped silicon

p-type silicon p-type Si silicon
Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

indium selenide nanoflakes

indium selenide nanoflakes multilayer InSe nanosheets ultrathin flakes of InSe atomic sheets of InSe InSe nanoflakes InSe nanosheets few-layer InSe InSe layers
Type Nano Material
Formula
Role channel layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

few layer boron nitride nanosheets

few layer boron nitride nanosheets hexagonal-boron nitride nanosheets hexagonal boron nitride monolayer monolayer hexagonal boron nitride hexagonal boron nitride flakes boron nitride nanosheets hexagonal boron nitride monolayer h-BN sheets single-layer h-BN thin h-BN layers h-BN nanosheets h-BN nanoflakes h-BN monolayer hBN nanosheets monolayer h-BN BN nanosheets monolayer hBN h-BN flakes h-BN layers h-BN NS hBN NS BN NS FBNNS h-BN BNNS hBN
Type Nano Material
Formula
Role capping layer

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  1. 0MVR8g2VHddJ
Product

field-effect transistor based on thin hexagonal boron nitride layer-capped indium selenide atomic sheet

References

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