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vertical wrap-gated indium arsenide/alumina-hafnia nanowire metal-organic semiconductor capacitor

Based on

1 Articles
2016 Most recent source

Composition

1

p-doped silicon

p-doped Si silicon p-Si
Type Single Compound
Formula Si
Role substrate
2

indium(III) arsenide

indium monoarsenide indium arsenide
Type Single Compound
Formula InAs
Role buffer layer
3

alumina/hafnia

Type Complex Compound
Formula
Role dielectric layer
4

S1818

Type Complex Compound
Formula
Role spacer layer
5

tungsten

Type Single Compound
Formula W
Role finger gate
6

titanium/tungsten/gold

Type Complex Compound
Formula
Role source
7

tungsten/alumina-hafnia/gold-capped and tin-doped indium arsenide nanowires

vertical wrap-gated InAs nanowires
Type
Formula
Role
8

titanium/tungsten/gold

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance dependent on measurement frequency

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Applications

Area Application Nanomaterial Variant Source
energy storage

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Characterization

Biological effects

Preparation

References

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