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PET/partially embedded Ag NW in PI substrate/SU-8/Al2O3/MoS2/Ti/Au thin film transistor

Based on

1 Articles
2016 Most recent source

Composition

1

poly(ethylene terephthalate)

polyethylene terephthalate polyester PETE PET
Type Polymer
Formula
Role support layer
2

partially embedded Ag NW in PI substrate/SU-8/Al2O3

Type Nano Material
Formula
Role gate insulator
3

edge-rich 2H-MoS2 ultrathin nanosheets

chemically exfoliated MoS2 nanosheets molybdenum(IV) sulfide nanosheets 2D crystals of molybdenum sulfide molybdenum(II) sulfide nanosheets molybdenum disulfide nanosheets molybdenum disulfide monolayers molybdenum sulfide nanosheets multilayer molybdenum sulfide molybdenum disulfide flakes MoS2 nanometer-sized sheets ultrathin MoS2 nanosheets multilayered MoS2 flakes layered MoS2 2D material multilayer MoS2 flakes few-layer MoS2 flakes atomically thin MoS2 MoS2 nanostructures 2D MoS2 nanolayers 2D MoS2 nanosheets multilayered MoS2 MoS2 nanosheets MoS2 nanoflakes multilayer MoS2 exfoliated MoS2 sheet-like MoS2 monolayer MoS2 MoS2 sheets MoS2 flakes MoS2 slabs MoS2 NS MoS2 NS ce-MoS2
Type Nano Material
Formula
Role active channel
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain-source current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

PET/partially embedded Ag NW in PI substrate/SU-8/Al2O3/MoS2/Ti/Au thin film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

PET/partially embedded Ag NW in PI substrate/SU-8/Al2O3/MoS2/Ti/Au thin film transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
Product

PET/partially embedded Ag NW in PI substrate/SU-8/Al2O3/MoS2/Ti/Au thin film transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
Product

PET/partially embedded Ag NW in PI substrate/SU-8/Al2O3/MoS2/Ti/Au thin film transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
Product

PET/partially embedded Ag NW in PI substrate/SU-8/Al2O3/MoS2/Ti/Au thin film transistor

Size: not specified

Medium/Support: none

References

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