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single-walled carbon nanotubes-incorporated lithium-doped zinc oxide film-based thin-film transistor

Based on

1 Articles
2016 Most recent source

Composition

1

p-doped silicon

p-doped Si
Type Complex Compound
Formula
Role bottom gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

single-walled carbon nanotubes-incorporated lithium-doped zinc oxide film

SWNT-incorporated Li-doped ZnO film SWNT-incorporated LiZnO film
Type Nano Material
Formula
Role channel layer
4

aluminium

aluminum
Type Single Compound
Formula Al
Role drain
5

aluminium

aluminum
Type Single Compound
Formula Al
Role source

Properties

General physical and chemical properties

Property Value Source
drain current dependent on gate voltage

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Applications

Area Application Source
electronics

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • p-doped silicon
Product

single-walled carbon nanotubes-incorporated lithium-doped zinc oxide film-based thin-film transistor

References

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