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amorphous indium gallium zinc oxide/single-walled carbon nanotube composite thin film transistor

Based on

1 Articles
2016 Most recent source

Composition

1

O2 plasma-treated glass

Type Complex Compound
Formula
Role substrate
2

amorphous indium gallium zinc oxide/single-walled carbon nanotube composite thin film

a-IGZO/SWNT composite thin film
Type Nano Material
Formula
Role semiconductor layer
3

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role gate
6

chromium

Type Single Compound
Formula Cr
Role adhesion layer
7

gold

Type Single Compound
Formula Au
Role source
8

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Product

amorphous indium gallium zinc oxide/single-walled carbon nanotube composite thin film transistor

Size: not specified

Medium/Support: none

References

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