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InAs NW based field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

n-doped Si

Type Complex Compound
Formula
Role back-gate electrode
2

S1813 photoresist

Type Complex Compound
Formula
Role dielectric layer
3

indium arsenide nanowires

InAs NW
Type Nano Material
Formula
Role conducting layer
4

chromium-gold-chromium film

Cr/Au/Cr film
Type Nano Material
Formula
Role drain
5

chromium-gold-chromium film

Cr/Au/Cr film
Type Nano Material
Formula
Role source

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • S1813 photoresist
  • n-doped Si
Product

InAs NW based field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • S1813 photoresist
  • n-doped Si
Product

InAs NW based field-effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • S1813 photoresist
  • n-doped Si
Product

InAs NW based field-effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
  • S1813 photoresist
  • n-doped Si
Product

InAs NW based field-effect transistor

References

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