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interfacial phase-change memory device

Based on

1 Articles
2016 Most recent source

Composition

1

tungsten

Type Single Compound
Formula W
Role electrodes
2

Sb2Te3/GeTe film

Type Nano Material
Formula
Role superlattice film
3

titanium nitride

Type Single Compound
Formula TiN
Role adhesion layer
4

aluminium

aluminum
Type Single Compound
Formula Al
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
resistance

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • antimony(III) telluride
  • tungsten
  1. PxWSNS
  2. wxKwB
Product

interfacial phase-change memory device

Size: not specified

Medium/Support: none

References

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