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back-gated InP nanowire field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

P+-Si/SiO2

Type Complex Compound
Formula
Role gate dielectrics
2

InP nanowires

InP NW
Type Nano Material
Formula
Role channels
3

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role source
4

chromium/gold film

Cr/Au film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source

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Sensor properties

Type of sensor Sensor property Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. p66GYD
  2. VXnMyaXMcAZZLrm8wcsLK0xLuV
Product

back-gated InP nanowire field-effect transistor

References

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