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bottom gate organic field-effect transistor based on n-type naphthalene diimide derivative NDI(2OD)(4t-BuPh)-DTYM2

Based on

1 Articles
2015 Most recent source

Composition

1

highly doped silicon

doped silicon silicon
Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

NDI(2OD)(4t-BuPh)-DTYM2 film

Type Nano Material
Formula
Role n-type channel layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
Seebeck coefficient

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon/silica
Product

bottom gate organic field-effect transistor based on n-type naphthalene diimide derivative NDI(2OD)(4t-BuPh)-DTYM2

References

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