Loading ...

transistor memory device

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role blocking gate dielectric
3

cross-linked poly-4-vinylphenol

cross-linked PVP cPVP
Type Polymer
Formula
Role tunneling gate dielectric
4

few-layered black phosphorus nanoflakes

BP nanoflakes
Type Nano Material
Formula
Role channels
5

nickel

Type Single Compound
Formula Ni
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain
8

methyl methacrylate resin

methyl methacrylate resin PMMA
Type Polymer
Formula
Role passivation layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
data storage

More information available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si/SiO2 substrate
  • poly(melamine-co-formaldehyde)
  • poly-4-vinylphenol
  1. TrtVqfue9UJCF9RE42wM20UMp3FGI8m4vxGU72EoZ
Product

transistor memory device

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial