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transistor memory device

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role blocking gate dielectric
3

cross-linked poly-4-vinylphenol

cross-linked PVP cPVP
Type Polymer
Formula
Role tunneling gate dielectric
4

few-layered black phosphorus nanoflakes

BP nanoflakes
Type Nano Material
Formula
Role channels
5

nickel

Type Single Compound
Formula Ni
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain
8

poly(methyl methacrylate)

methyl methacrylate resin PMMA
Type Polymer
Formula
Role passivation layer

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • Si/SiO2 substrate
  • poly(melamine-co-formaldehyde)
  • poly-4-vinylphenol
  1. Pb09gLMDzAG67Jqkz013dccdbq2eZ9g7uFP5EqbOy
Product

transistor memory device

References

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