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field-effect transistor based on indium selenide atomic sheet

Based on

1 Articles
2016 Most recent source

Composition

1

p-doped silicon

p-type silicon p-type Si silicon
Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

multilayer InSe nanosheets

indium selenide nanoflakes multilayer InSe nanosheets ultrathin flakes of InSe atomic sheets of InSe InSe nanosheets InSe nanoflakes few-layer InSe InSe layers
Type Nano Material
Formula
Role channel layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on storage time

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  1. iPM41vGdS6zL
Product

field-effect transistor based on indium selenide atomic sheet

Size: not specified

Medium/Support: none

References

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