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GaN/AlN multiple quantum disk nanowire superlattice heterostructure light-emitting diode

Based on

1 Articles
2016 Most recent source

Composition

1

p-type silicon

Type Complex Compound
Formula
Role substrate
2

gallium nitride/aluminium nitride multiple quantum disk nanowire superlattice heterostructure

GaN/AlN multiple quantum disk nanowire superlattice heterostructure GaN/AlN MQD nanowire superlattice heterostructure
Type Nano Material
Formula
Role semiconductors
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role n-type contact
5

iridium

Type Single Compound
Formula Ir
Role p-type contact

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Product

GaN/AlN multiple quantum disk nanowire superlattice heterostructure light-emitting diode

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Product

GaN/AlN multiple quantum disk nanowire superlattice heterostructure light-emitting diode

Size: not specified

Medium/Support: none

References

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