Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

bottom-gate/top-contact field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

n-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

n-octadecyltrimethoxylsilane

n-octadecyltrimethoxysilane trimethoxy(octadecyl)silane noctadecyltrimethoxysilane octadecyltrimethoxy silane octadecyltrimethoxylsilane octadecyltrimethoxysilane trimethoxyoctadecylsilane C18TMOS C18TMS C18TMS n-ODMS ODTMS OTMOS TMOS OTMS ODTS ODMS TMS OTS ODS
Type
Formula C18H37Si(OCH3)3
Role
4

isoindigo-based polymer nanofibers interconnected network

isoindigo-based polymer nanofibers
Type Nano Material
Formula
Role channels
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
average hole mobility dependent on annealing

5 more entries available to subscribers only.

Or, view sample content

Applications

Area Application Source
electronics

0 more entry available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n-octadecyltrimethoxylsilane
  • n-doped Si/SiO2
Product

bottom-gate/top-contact field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • n-octadecyltrimethoxylsilane
  • n-doped Si/SiO2
Product

bottom-gate/top-contact field-effect transistor

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial