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field-effect transistor based on poly(3,4-didodecylthienylene)azine wrapped single-walled carbon nanotubes

Based on

1 Articles
2015 Most recent source

Composition

1

highly doped silicon

doped silicon silicon
Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

network of poly(3,4-didodecylthienylene)azine wrapped single-walled carbon nanotubes

network of SWNT SWNT network
Type Nano Material
Formula
Role channel layer
4

titanium/gold

Type Complex Compound
Formula
Role source
5

titanium/gold

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current dependent on channel width

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon/silica
  1. nj64j9Z0o6TQ
Product

field-effect transistor based on poly(3,4-didodecylthienylene)azine wrapped single-walled carbon nanotubes

References

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