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single-walled nanotube-based complementary metal-oxide-semiconductor inverter

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

hafnium oxide film

HfO2 film
Type Nano Material
Formula
Role gate dielectrics
3

thin film of P-DPPb5T-wrapped single-walled carbon nanotubes

single-walled carbon nanotube thin film thin film of P-DPPb5T-wrapped SWCNT SWCNT thin film
Type Nano Material
Formula
Role semiconductor layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

methyl methacrylate resin

methyl methacrylate resin PMMA
Type Polymer
Formula
Role barrier layer
7

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type
Formula AlO(x)
Role
8

silver enzymatically grown nanoparticles

silver nanoparticle films silver nanoparticles Ag nanoparticles nanosilver film Ag thin film silver EGNP silver NP Ag NP AgNP SNF
Type Nano Material
Formula
Role interconnects

Properties

General physical and chemical properties

Property Value Source
chopped input voltage-induced output voltage dependent on frequency

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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