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ionic-liquid-gated 1L MoS2 FET

Based on

1 Articles
2016 Most recent source

Composition

1

silicon/silica

Si/SiO2
Type Complex Compound
Formula
Role substrate
2

MoS2 nanosheets

two-layer MoS2 MoS2 bilayers 2L MoS2
Type
Formula
Role
3

gold

Type Single Compound
Formula Au
Role source
4

gold

Type Single Compound
Formula Au
Role grains
5

N,N-diethyl-N-methyl-N-(2-methoxyethyl) ammonium bis(trifluoromethanesulfonyl) imide

N,N-diethyl-N-methyl-N-(2- methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)-ammonium bis-(trifluoromethylsulfonyl)imide N, N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulphonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-(trifluoromethylsulfonylimide) N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-trifluoromethylsulfonyl)-imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulfonyl)imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-(trifluoromethylsulfonyl)-imide N,N-Diethyl-2-methoxy-N-methylethanaminium bis[(trifluoromethyl)sulfonyl]azanide N,N-diethyl-2-methoxy-N-methylethanaminium bis[(trifluoromethyl)sulfonyl]azanide N,N-diethyl-N-(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide diethylmethyl(2-methoxyethyl) ammonium bis(trifluoromethylsulfonyl)imide diethylmethyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide [DEME]-[TFSI] [deme][Tf2N] DEME-TFSI
Type
Formula C10H20F6N2O5S2
Role
6

gold

Type Single Compound
Formula Au
Role gate

Properties

General physical and chemical properties

Property Value Source
Berenzinskii-Kosterlitz-Thouless transition temperature

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  • molybdenum(IV) sulfide
  1. 3nfE44JJXtxOo
Product

ionic-liquid-gated 1L MoS2 FET

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  • molybdenum(IV) sulfide
  1. qewQ5AItpH4Iy
Product

ionic-liquid-gated 1L MoS2 FET

Method 3

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  • molybdenum(IV) sulfide
  1. ydNlzdxsRpg1Q
Product

ionic-liquid-gated 1L MoS2 FET

Method 4

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  • molybdenum(IV) sulfide
  1. XENaiNitac9dN
Product

ionic-liquid-gated 1L MoS2 FET

References

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