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ionic-liquid-gated 1L MoS2 FET

Based on

1 Articles
2016 Most recent source

Composition

1

silicon/silica

Si/SiO2
Type Complex Compound
Formula
Role substrate
2

MoS2 monolayers

MoS2 monolayers 1L MoS2
Type
Formula
Role
3

gold

Type Single Compound
Formula Au
Role source
4

gold

Type Single Compound
Formula Au
Role grains
5

N,N-diethyl-N-methyl-N-(2-methoxyethyl) ammonium bis(trifluoromethanesulfonyl) imide

N,N-diethyl-N-methyl-N-(2- methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)-ammonium bis-(trifluoromethylsulfonyl)imide N, N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulphonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-(trifluoromethylsulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-(trifluoromethylsulfonylimide) N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-trifluoromethylsulfonyl)-imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-trifluoromethylsulfonyl)imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-(trifluoromethylsulfonyl)-imide N,N-Diethyl-2-methoxy-N-methylethanaminium bis[(trifluoromethyl)sulfonyl]azanide N,N-diethyl-2-methoxy-N-methylethanaminium bis[(trifluoromethyl)sulfonyl]azanide N,N-diethyl-N-(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide diethylmethyl(2-methoxyethyl) ammonium bis(trifluoromethylsulfonyl)imide diethylmethyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide [DEME]-[TFSI] [deme][Tf2N] DEME-TFSI
Type
Formula C10H20F6N2O5S2
Role
6

gold

Type Single Compound
Formula Au
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Berenzinskii-Kosterlitz-Thouless transition temperature

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  • molybdenum(IV) sulfide
  1. rn0aCCJpcFBKB
Product

ionic-liquid-gated 1L MoS2 FET

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  • molybdenum(IV) sulfide
  1. KXAK2IHfdcuov
Product

ionic-liquid-gated 1L MoS2 FET

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  • molybdenum(IV) sulfide
  1. VSZFL20JO1F6H
Product

ionic-liquid-gated 1L MoS2 FET

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  • molybdenum(IV) sulfide
  1. o1GuKShCCaNSn
Product

ionic-liquid-gated 1L MoS2 FET

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  • molybdenum(IV) sulfide
  1. chFUyaWd6NSPF
Product

ionic-liquid-gated 1L MoS2 FET

Size: not specified

Medium/Support: none

References

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