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bottom-gate/top-contact field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

n-Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

n-octadecyltrimethoxylsilane

n-octadecyltrimethoxysilane trimethoxy(octadecyl)silane noctadecyltrimethoxysilane octadecyltrimethoxy silane octadecyltrimethoxylsilane octadecyltrimethoxysilane trimethoxyoctadecylsilane C18TMOS C18TMS C18TMS n-ODMS ODTMS OTMOS ODMS ODTS OTMS TMOS ODS OTS TMS
Type
Formula C18H37Si(OCH3)3
Role
4

isoindigo-based polymer nanofibers interconnected network

isoindigo-based polymer nanofibers
Type Nano Material
Formula
Role channels
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n-octadecyltrimethoxylsilane
  • n-doped Si/SiO2
Product

bottom-gate/top-contact field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • n-octadecyltrimethoxylsilane
  • n-doped Si/SiO2
Product

bottom-gate/top-contact field-effect transistor

References

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