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BP/h-BN/MoS2 floating-gate field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

n-type Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

few-layer molybdenum disulfide flakes

few-layer MoS2
Type Nano Material
Formula
Role charge-trapping layer
4

few-layer hexagonal boron nitride flakes

few-layer h-BN
Type Nano Material
Formula
Role tunnel barrier layer
5

few-layer black phosphorous flakes

few-layer BP
Type Nano Material
Formula
Role channel layer
6

chromium

Type Single Compound
Formula Cr
Role electrodes
7

gold

Type Single Compound
Formula Au
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
control gate voltage

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

BP/h-BN/MoS2 floating-gate field-effect transistor

Size: not specified

Medium/Support: none

References

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