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few-layer WSe2-based ferroelectric field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

strontium dioxido(oxo)titanium

strontium titanium trioxide strontium titanium oxide strontium titanate STO
Type Single Compound
Formula SrTiO3
Role substrate
2

strontium ruthenium oxide

strontium ruthanate strontium ruthenate SRO113 t-SRO SRO
Type Single Compound
Formula SrRuO3
Role gate
3

lead zirconium titanate

lead zirconium titanate PZT
Type Single Compound
Formula PbZr0.2Ti0.8O3
Role ferroelectric layer
4

few-layer tungsten selenide flakes

tungsten selenide flakes few-layer WSe2 flakes WSe2 flakes 3L-WSe2
Type Nano Material
Formula
Role semiconductor layer
5

platinum/gold bilayer

Pt/Au bilayer
Type Nano Material
Formula
Role source
6

platinum/gold bilayer

Pt/Au bilayer
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • strontium dioxido(oxo)titanium
  • strontium ruthenium oxide
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  2. uqElOp5zC0GdVVRT3tI4RddGC6irfXr
  3. 3OiTzUchkhj14
Product

few-layer WSe2-based ferroelectric field-effect transistor

References

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