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oxygen-deficient tantalum oxide-based memristor

Based on

1 Articles
2015 Most recent source

Composition

1

tungsten

Type Single Compound
Formula W
Role bottom electrode
2

oxygen deficient tantalum oxide

tantalum suboxide tantalum oxide TaO2-x TaOx TaOy TaOx
Type Single Compound
Formula TaO(x)
Role resistive switching layer
3

platinum

Type Single Compound
Formula Pt
Role top electrode
4

tantalum pentoxide

tantalum(V) oxide tantalum oxide
Type Single Compound
Formula Ta2O5
Role insulating layer
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

Si/SiO2

Type Complex Compound
Formula
Role substrate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
cumulative probability

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • titanium
  • Si/SiO2
Product

oxygen-deficient tantalum oxide-based memristor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • titanium
  • Si/SiO2
Product

oxygen-deficient tantalum oxide-based memristor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • titanium
  • Si/SiO2
Product

oxygen-deficient tantalum oxide-based memristor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • titanium
  • Si/SiO2
Product

oxygen-deficient tantalum oxide-based memristor

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • titanium
  • Si/SiO2
Product

oxygen-deficient tantalum oxide-based memristor

Size: not specified

Medium/Support: none

References

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