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field-effect transistor based on poly(2,5-dimethylidynenitrilo-3,4-didodecylthienylene) wrapped single-walled carbon nanotubes

Based on

1 Articles
2015 Most recent source

Composition

1

highly doped silicon

doped silicon silicon
Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

network of poly(2,5-dimethylidynenitrilo-3,4-didodecylthienylene) wrapped single-walled carbon nanotubes

network of SWNT SWNT network
Type Nano Material
Formula
Role channel layer
4

titanium/gold

Type Complex Compound
Formula
Role source
5

titanium/gold

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on channel width

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon/silica
  1. BAup64ZHqIHv
Product

field-effect transistor based on poly(2,5-dimethylidynenitrilo-3,4-didodecylthienylene) wrapped single-walled carbon nanotubes

Size: not specified

Medium/Support: none

References

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