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ferroelectric field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

strontium dioxido(oxo)titanium

strontium titanium trioxide strontium titanium oxide strontium titanate STO
Type Single Compound
Formula SrTiO3
Role substrate
2

strontium ruthenium oxide

strontium ruthenate strontium ruthanate SRO113 t-SRO SRO
Type Single Compound
Formula SrRuO3
Role gate
3

lead zirconium titanate

lead zirconium titanate PZT
Type Single Compound
Formula PbZr0.2Ti0.8O3
Role ferroelectric layer
4

monolayer tungsten selenide flakes

tungsten selenide flakes monolayer WSe2 flakes WSe2 flakes 1L-WSe2
Type Nano Material
Formula
Role semiconductor layer
5

platinum/gold bilayer

Pt/Au bilayer
Type Nano Material
Formula
Role source
6

platinum/gold bilayer

Pt/Au bilayer
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility dependent on down-polarized state

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • strontium dioxido(oxo)titanium
  • strontium ruthenium oxide
  1. 7afkwxacffclQFa8
  2. F0ZccxZ3WZbGuELWNuxZsH7Tcbc6Gms
  3. San9BlvdmAQIa
Product

ferroelectric field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • strontium dioxido(oxo)titanium
  • strontium ruthenium oxide
  1. aKS4l8oZNAWOKKyg
  2. 2eLFiWZxWNeI31gSAZz1NHKYYYaHxwX
  3. qewmJe6NtaiWO
Product

ferroelectric field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • strontium dioxido(oxo)titanium
  • strontium ruthenium oxide
  1. MPwQFyREW23Hwd7V
  2. AhTyxLcPNkNFJcLYOQJ9Nl5DSnwubSo
  3. TYqqCDD9o4kZP
Product

ferroelectric field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • strontium dioxido(oxo)titanium
  • strontium ruthenium oxide
  1. MiO52nBjAftH4laZ
  2. OrmtS5FEc5p4mdbe9lekFjo8uBM7goF
  3. HbJx68azKa71m
Product

ferroelectric field-effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • strontium dioxido(oxo)titanium
  • strontium ruthenium oxide
  1. WDXoZLi4eZVLt3Kh
  2. NC6gu3qRBIw13NuJqwBnIj2VKsAoXmz
  3. Q8HlIRQ7QDvIR
Product

ferroelectric field-effect transistor

Size: not specified

Medium/Support: none

References

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