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dual-gate bilayer graphene field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-Si

Type Complex Compound
Formula
Role bottom gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role gate dielectrics
4

double-layer graphene systems

double-layer graphene sheets multi-layer graphene sheets multilayer graphene sheets bilayer graphene supercell double-layered graphene bilayer graphene film double-layer graphene double layer graphene multi-layer graphene two-layered graphene multilayer graphene bi-layered graphene few-layer graphene bilayered graphene bi-layer graphene graphene bilayers bilayer graphene graphene bilayer 2-layer graphene graphene flakes graphene sheets 2L graphene BL graphene bilayer GF graphene BLG film 2L Gr BLG DLG 2LG GF BG
Type Nano Material
Formula
Role channels
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain
8

gold

Type Single Compound
Formula Au
Role upper gate
9

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role top gate dielectric

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier density dependent on electric displacement field

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. 7o8C
Product

dual-gate bilayer graphene field-effect transistor

Size: not specified

Medium/Support: none

References

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