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dual-gate bilayer graphene field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-Si

Type Complex Compound
Formula
Role bottom gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role gate dielectrics
4

double-layer graphene systems

double-layer graphene sheets multi-layer graphene sheets bilayer graphene supercell multilayer graphene sheets double-layered graphene bilayer graphene film double layer graphene double-layer graphene multi-layer graphene two-layered graphene multilayer graphene bi-layered graphene few-layer graphene bilayered graphene bi-layer graphene graphene bilayers bilayer graphene graphene bilayer 2-layer graphene graphene sheets graphene flakes 2L graphene BL graphene bilayer GF graphene BLG film 2L Gr 2LG BLG DLG GF BG
Type Nano Material
Formula
Role channels
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain
8

gold

Type Single Compound
Formula Au
Role upper gate
9

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role top gate dielectric

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. J4Eh
Product

dual-gate bilayer graphene field-effect transistor

References

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