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rubrene field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

heavily doped silicon

Type
Formula
Role
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

gold/titanium film

gold/titanium film Ti/Au film Au/Ti film
Type Nano Material
Formula
Role source
4

gold/titanium film

gold/titanium film Ti/Au film Au/Ti film
Type Nano Material
Formula
Role drain
5

5,6,11,12-tetraphenylnaphthacene

5,6,11,12-tetraphenyltetracene ruberene rubrene RUB
Type Single Compound
Formula C42H28
Role channels
6

trichloro(octadecyl)-silane

n-octadecyltrichlorosilane trichloro(octadecyl)silane octadecayltrichlorosilane octadecyl trichlorosilane octadecyltrichlorosilane trichlorooctadecylsilane octadecyltrchlorosilane C18-OTS ODTS OTCS OTS
Type
Formula C18H37Cl3Si
Role

Properties

General physical and chemical properties

Property Value Source
capacitance in channel

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Applications

Area Application Source
electronics

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Characterization

Method Source
dielectric spectroscopy dependent on gate voltage

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
Product

rubrene field-effect transistor

References

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